JPS643361B2 - - Google Patents
Info
- Publication number
- JPS643361B2 JPS643361B2 JP56110973A JP11097381A JPS643361B2 JP S643361 B2 JPS643361 B2 JP S643361B2 JP 56110973 A JP56110973 A JP 56110973A JP 11097381 A JP11097381 A JP 11097381A JP S643361 B2 JPS643361 B2 JP S643361B2
- Authority
- JP
- Japan
- Prior art keywords
- source
- drain
- gate
- current
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims abstract description 92
- 230000010355 oscillation Effects 0.000 claims abstract description 68
- 239000003990 capacitor Substances 0.000 claims abstract description 47
- 230000000295 complement effect Effects 0.000 claims abstract description 30
- 230000004044 response Effects 0.000 claims abstract description 6
- 230000001105 regulatory effect Effects 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 230000001276 controlling effect Effects 0.000 claims 1
- 230000003321 amplification Effects 0.000 abstract description 12
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 230000000977 initiatory effect Effects 0.000 abstract description 3
- 239000010453 quartz Substances 0.000 abstract 3
- 230000005669 field effect Effects 0.000 abstract 1
- 230000007423 decrease Effects 0.000 description 24
- 239000000758 substrate Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 11
- 230000008901 benefit Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000003534 oscillatory effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
- H03B5/364—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device the amplifier comprising field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/354—Astable circuits
- H03K3/3545—Stabilisation of output, e.g. using crystal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L3/00—Starting of generators
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Oscillators With Electromechanical Resonators (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/169,554 US4360789A (en) | 1980-07-17 | 1980-07-17 | Very low current pierce oscillator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5752205A JPS5752205A (en) | 1982-03-27 |
| JPS643361B2 true JPS643361B2 (en]) | 1989-01-20 |
Family
ID=22616186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56110973A Granted JPS5752205A (en) | 1980-07-17 | 1981-07-17 | Small current pierce oscillator |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4360789A (en]) |
| JP (1) | JPS5752205A (en]) |
| CH (1) | CH648180GA3 (en]) |
| DE (1) | DE3127588A1 (en]) |
| GB (2) | GB2080650B (en]) |
| HK (2) | HK5986A (en]) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH640693B (fr) * | 1980-07-21 | Asulab Sa | Circuit oscillateur c-mos. | |
| DE3831176A1 (de) * | 1988-09-13 | 1990-03-22 | Siemens Ag | Oszillatorzelle |
| NL9100066A (nl) * | 1991-01-16 | 1992-08-17 | Koninkl Philips Electronics Nv | Oscillator. |
| JP3270880B2 (ja) * | 1994-06-30 | 2002-04-02 | ソニー株式会社 | 水晶発振回路 |
| US5557243A (en) * | 1995-04-19 | 1996-09-17 | Lg Semicon Co., Ltd. | Oscillation circuit with power limiting controller |
| US5568093A (en) * | 1995-05-18 | 1996-10-22 | National Semiconductor Corporation | Efficient, high frequency, class A-B amplifier for translating low voltage clock signal levels to CMOS logic levels |
| JPH11514185A (ja) * | 1996-08-07 | 1999-11-30 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 始動回路を具える発振器 |
| JPH11514184A (ja) * | 1996-08-07 | 1999-11-30 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 発振器 |
| US5909152A (en) * | 1997-02-28 | 1999-06-01 | Texas Instruments Incorporated | Low power CMOS crystal oscillator circuit |
| US6278336B1 (en) | 1998-02-27 | 2001-08-21 | Texas Instruments Incorporated | Low-current oscillator with hysteresis input buffer |
| GB0030694D0 (en) * | 2000-12-15 | 2001-01-31 | Nokia Mobile Phones Ltd | An electronic circuit supplied with power via current generator means |
| EP1289121A1 (fr) * | 2001-08-13 | 2003-03-05 | EM Microelectronic-Marin SA | Circuit oscillateur à inverseur à consommation réduite |
| GB2402276B (en) * | 2003-03-07 | 2005-08-03 | Motorola Inc | Amplitude level control circuit |
| US7170332B2 (en) * | 2004-04-15 | 2007-01-30 | Analog Devices, Inc. | Reference signal generators |
| US7688154B1 (en) * | 2006-06-21 | 2010-03-30 | Exar Corporation | Amplitude regulated crystal oscillator |
| US7372342B2 (en) * | 2006-07-31 | 2008-05-13 | Freescale Semiconductor, Inc. | Oscillator |
| US7391278B2 (en) * | 2006-07-31 | 2008-06-24 | Freescale Semiconductor, Inc. | Oscillator with stacked amplifier |
| JP5779162B2 (ja) * | 2012-09-28 | 2015-09-16 | 株式会社東芝 | 整流回路とこれを用いた無線通信装置 |
| US8922287B2 (en) * | 2013-01-30 | 2014-12-30 | Freescale Semiconductor, Inc. | Amplitude loop control for oscillators |
| CN111404486B (zh) * | 2020-03-25 | 2024-05-03 | 上海洺太电子科技有限公司 | 一种基于自充电的低功耗晶体振荡器 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH596598B5 (en]) * | 1973-06-20 | 1978-03-15 | Ebauches Sa | |
| CH580358A5 (en]) * | 1974-09-20 | 1976-09-30 | Centre Electron Horloger | |
| JPS5179371A (en]) * | 1974-12-18 | 1976-07-10 | Suwa Seikosha Kk | |
| JPS51123044A (en) * | 1975-04-21 | 1976-10-27 | Hitachi Ltd | Starting circuit in the oscillation circuit |
| US4211985A (en) * | 1975-09-03 | 1980-07-08 | Hitachi, Ltd. | Crystal oscillator using a class B complementary MIS amplifier |
| JPS5855685B2 (ja) * | 1975-09-03 | 1983-12-10 | 株式会社日立製作所 | ゾウフクカイロ |
| US4013797A (en) * | 1975-12-10 | 1977-03-22 | Microlife Technics, Inc. | Bacterial compositions and process for fermentation of meat therewith |
| US4095195A (en) * | 1977-03-25 | 1978-06-13 | Kabushiki Kaisha Meidensha | Low power dissipation crystal oscillator |
| DE2714151C2 (de) * | 1977-03-30 | 1984-03-08 | Kabushiki Kaisha Meidensha, Tokyo | Quarzoszillator niedriger Verlustleistung |
| CH613357GA3 (en) * | 1977-03-30 | 1979-09-28 | Crystal oscillator | |
| JPS53146558A (en) * | 1977-05-26 | 1978-12-20 | Citizen Watch Co Ltd | Oscillator circuit |
| JPS5936445B2 (ja) * | 1977-06-21 | 1984-09-04 | シチズン時計株式会社 | 低電力化回路 |
| JPS5528680A (en) * | 1978-08-22 | 1980-02-29 | Nec Corp | Oscillation circuit |
-
1980
- 1980-07-17 US US06/169,554 patent/US4360789A/en not_active Expired - Lifetime
-
1981
- 1981-07-07 GB GB8120890A patent/GB2080650B/en not_active Expired
- 1981-07-13 DE DE19813127588 patent/DE3127588A1/de not_active Withdrawn
- 1981-07-15 CH CH464881A patent/CH648180GA3/de unknown
- 1981-07-17 JP JP56110973A patent/JPS5752205A/ja active Granted
-
1984
- 1984-08-15 GB GB08420746A patent/GB2143393B/en not_active Expired
-
1986
- 1986-01-23 HK HK59/86A patent/HK5986A/xx unknown
- 1986-03-13 HK HK177/86A patent/HK17786A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB2143393B (en) | 1985-09-18 |
| GB2080650B (en) | 1985-08-21 |
| CH648180GA3 (en]) | 1985-03-15 |
| GB8420746D0 (en) | 1984-09-19 |
| JPS5752205A (en) | 1982-03-27 |
| US4360789A (en) | 1982-11-23 |
| GB2143393A (en) | 1985-02-06 |
| HK17786A (en) | 1986-03-21 |
| GB2080650A (en) | 1982-02-03 |
| HK5986A (en) | 1986-01-31 |
| DE3127588A1 (de) | 1982-04-22 |
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